Product Summary

The K9WAG08U1B-PIB0 is an 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Even the write-intensive systems can take advantage of the K9K8G08U0B-PCB0’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0B-PCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9K8G08U0B-PCB0 absolut maximum ratings: (1)Voltage on any pin relative to VSS, VCC: -0.6 to +4.6V; VIN: -0.6 to +4.6V; VI/O: -0.6 to Vcc+0.3V; (2)Temperature Under Bias, TBIAS: -10 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Current, IOS: 5mA.

Features

K9K8G08U0B-PCB0 features: (1)Voltage Supply: 3.3V (2.70V ~ 3.60V); (2)Automatic Program and Erase; (3)Fast Write Cycle Time; (4)Command/Address/Data Multiplexed I/O Port; (5)Hardware Data Protection; (6)Reliable CMOS Floating-Gate Technology; (7)Command Driven Operation; (8)Unique ID for Copyright Protection.

Diagrams

K9WAG08U1B-PIB0 block diagram

K9WAG08U1A
K9WAG08U1A

Other


Data Sheet

Negotiable 
K9WAG08U1A-PCBO
K9WAG08U1A-PCBO

Other


Data Sheet

Negotiable 
K9WAG08U1M
K9WAG08U1M

Other


Data Sheet

Negotiable