(China (Mainland))
Product Summary
The MJE182G is a complementary plastic silicon power transistor.
Parametrics
MJE182G absolute maximum ratings: (1) Operating and Storage Junction Temperature Range TJ, Tstg: －65 to +150; (2) Base CurrentIB: 1.0Adc; (3) Emitter Base VoltageVEB: 7.0Vdc; (4) Total Power Dissipation @ TC = 25℃Derate above 25℃ PD: 1.5W, 0.012W/℃.
Features
MJE182G features: (1) Collector Emitter Sustaining Voltage VCEO(sus) = 40 Vdc MJE170, MJE180= 60 Vdc MJE171, MJE181= 80 Vdc MJE172, MJE182 DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc= 12 (Min) @ IC = 1.5 Adc ; (2) Current Gain Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc ; (3) Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated VCB ; (4) Epoxy Meets UL 94 V 0 @ 0.125 in ; (5) ESD Ratings: Machine Model, CHuman Body Model, 3B ; (6) Pb Free Packages are Available*.
Diagrams
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 MJE182G |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 80V 12.5W NPN |
Data Sheet |
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