Product Summary

The MJE182G is a complementary plastic silicon power transistor.

Parametrics

MJE182G absolute maximum ratings: (1) Operating and Storage Junction Temperature Range TJ, Tstg: －65 to +150; (2) Base CurrentIB: 1.0Adc; (3) Emitter Base VoltageVEB: 7.0Vdc; (4) Total Power Dissipation @ TC = 25℃Derate above 25℃ PD: 1.5W, 0.012W/℃.

Features

MJE182G features: (1) Collector Emitter Sustaining Voltage VCEO(sus) = 40 Vdc MJE170, MJE180= 60 Vdc MJE171, MJE181= 80 Vdc MJE172, MJE182 DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc= 12 (Min) @ IC = 1.5 Adc ; (2) Current Gain Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc ; (3) Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated VCB ; (4) Epoxy Meets UL 94 V 0 @ 0.125 in ; (5) ESD Ratings: Machine Model, CHuman Body Model, 3B ; (6) Pb Free Packages are Available*.

Diagrams

MJE182G pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE182G
MJE182G
ON Semiconductor
Transistors Bipolar (BJT) 3A 80V 12.5W NPN
Data Sheet
0-1: $0.32
1-25: $0.25
25-100: $0.21
100-500: $0.18
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJE13005 LEADFREE
MJE13005 LEADFREE
Central Semiconductor
Transistors Bipolar (BJT) NPN Fast SW
Data Sheet
Negotiable 
MJE15029G
MJE15029G
ON Semiconductor
Transistors Bipolar (BJT) 8A 120V 50W PNP
Data Sheet
0-1: $0.76
1-25: $0.61
25-100: $0.54
100-500: $0.42
MJE13007G
MJE13007G
ON Semiconductor
Transistors Bipolar (BJT) 8A 400V 80W NPN
Data Sheet
0-1: $0.59
1-25: $0.47
25-100: $0.36
100-500: $0.32
MJE13009G
MJE13009G
ON Semiconductor
Transistors Bipolar (BJT) 12A 400V 100W NPN
Data Sheet
Negotiable 
MJE15030
MJE15030
ON Semiconductor
Transistors Bipolar (BJT) 8A 150V 50W NPN
Data Sheet
Negotiable 
MJE13006
MJE13006
Other

Data Sheet
Negotiable