(China (Mainland))
Product Summary
The IRGS14C40LPBF is an IGBT with on-chip gate-emitter and gate-collector clamps. The IRGS14C40LPBF includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits.
Parametrics
IRGS14C40LPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage: Clamped V; (2)Continuous Collector Current: 20 A; (3)Continuous Collector Current: 14 A; (4)Continuous Gate Current: 1 mA; (5)Peak Gate Current: 10 mA; (6)Gate-to-Emitter Voltage: Clamped V; (7)Maximum Power Dissipation: 125 W; (8)Maximum Power Dissipation: 54 W; (9)Operating Junction: - 40 to 175℃; (10)Storage Temperature Range: - 40 to 175℃; (11)Electrostatic Voltage: 6 KV; (12)Self-clamped Inductive Switching Current: 11.5 A.
Features
IRGS14C40LPBF features: (1)most rugged in industry; (2)logic-level gate drive; (3)＞6kV ESD gate protection; (4)low saturation voltage; (5)high self-clamped inductive switching energy; (6)lead-free.
Diagrams
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 IRGS14C40LPBF |
International Rectifier |
IGBT Transistors |
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IRGS14C40LPBF |
International Rectifier |
IGBT Transistors |
Data Sheet |
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