(China (Mainland))
Product Summary
The MSQA6V1W5T2G quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. The MSQA6V1W5T2G is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package.
Parametrics
MSQA6V1W5T2G absolute maximum ratings: (1)Peak Power Dissipation:150W; (2)Steady State Power:385mW; (3)Maximum Junction Temperature:150℃; (4)Operating Junction and Storage Temperature Range:-55 to +150℃; (5)ESD Discharge:16kV; (6)Lead Solder Temperature (10 s duration):260℃.
Features
MSQA6V1W5T2G features: (1)Low Clamping Voltage; (2)Stand Off Voltage 3 V; (3)Low Leakage < 1 uA @ 3 V; (4)SC-88A Package Allows Four Separate Unidirectional Configurations; (5)IEC1000-4-2 Level 4 ESD Protection; (6)SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; (7)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MSQA6V1W5T2G |
ON Semiconductor |
TVS Diode Arrays 6.1V 150W TVS Quad Array |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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MSQA6V1W5T2 |
ON Semiconductor |
TVS Diode Arrays 6.1V 150W TVS Quad |
Data Sheet |
Negotiable |
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MSQA6V1W5T2G |
ON Semiconductor |
TVS Diode Arrays 6.1V 150W TVS Quad Array |
Data Sheet |
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